2sA1962/fja4213 ? pnp epitax ial silicon transistor ? 2008 fairchild semiconductor corporation www.fairchildsemi.com 2sA1962/fja4213 rev. a2 1 march 2008 2sA1962/fja4213 pnp epitaxial silicon transistor applications ? high-fidelity audio output amplifier ? general purpose power amplifier features ? high current capability: i c = -15a ? high power dissipation : 130watts ? high frequency : 30mhz. ? high voltage : v ceo = -230v ? wide s.o.a for reliable operation. ? excellent gain linearity for low thd. ? complement to 2 sc5242 /fja4313. ? thermal and electrical sp ice models are available. ? same transistor is also available in: -- to264 package, 2sa1943/fjl4215 : 150 watts -- to220 package, fjp1943 : 80 watts -- to220f package, fjpf1943 : 50 watts absolute maximum ratings* t a = 25c unless otherwise noted * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. thermal characteristics* t a =25 c unless otherwise noted * device mounted on minimum pad size h fe classification symbol parameter ratings units bv cbo collector-base voltage -230 v bv ceo collector-emitter voltage -230 v bv ebo emitter-base voltage -5 v i c collector current -15 a i b base current -1.5 a p d total device dissipation(t c =25 c ) derate above 25 c 130 1.04 w w/ c t j , t stg junction and storage temperature - 50 ~ +150 c symbol parameter max. units r jc thermal resistance, junction to case 0.96 c/w classification r o h fe1 55 ~ 110 80 ~ 160 to-3p 1 1.base 2.collector 3.emitter
2sA1962/fja4213 ? pnp epitax ial silicon transistor ? 2008 fairchild semiconductor corporation www.fairchildsemi.com 2sA1962/fja4213 rev. a2 2 electrical characteristics* t a =25 c unless otherwise noted * pulse test: pulse width=20 s, duty cycle 2% ordering information symbol parameter test condition min. typ. max. units bv cbo collector-base breakdown voltage i c =-5ma, i e =0 -230 v bv ceo collector-emitter breakdown voltage i c =-10ma, r be = -230 v bv ebo emitter-base breakdown voltage i e =-5ma, i c =0 -5 v i cbo collector cut-off current v cb =-230v, i e =0 -5.0 a i ebo emitter cut-off current v eb =-5v, i c =0 -5.0 a h fe1 dc current gain v ce =-5v, i c =-1a 55 160 h fe2 dc current gain v ce =-5v, i c =-7a 35 60 v ce (sat) collector-emitter saturation voltage i c =-8a, i b =-0.8a -0.4 -3.0 v v be (on) base-emitter on voltage v ce =-5v, i c =-7a -1.0 -1.5 v f t current gain bandwidth product v ce =-5v, i c =-1a 30 mhz c ob output capacitance v cb =-10v, f=1mhz 360 pf part number marking package packing method remarks 2sA1962rtu A1962r to-3p tube hfe1 r grade 2sA1962otu A1962o to-3p tube hfe1 o grade fja4213rtu j4213r to-3p tube hfe1 r grade fja4213otu j4213o to-3p tube hfe1 o grade
2sA1962/fja4213 ? pnp epitax ial silicon transistor ? 2008 fairchild semiconductor corporation www.fairchildsemi.com 2sA1962/fja4213 rev. a2 3 typical characteristics figure 1. static characteristic figure 2. dc current gain figure 3. base-emitter saturation voltage figure 4. collector-emitter saturation voltage figure 5. base-emitter on voltage figure 6. thermal resistance -0 -2 -4 -6 -8 -10 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 i b = - 5 0 0 m a i b = - 6 0 0 m a i b = - 4 0 0 m a i b = -700ma i b = -300ma i b = -900ma i b = -200ma i b = -800ma i b = -1a i b = -100ma i c [ma], collector current v ce [v], collector-emitter voltage 110 1 10 100 v ce = -5v tj = -25 o c tj = 25 o c tj = 125 o c h fe , dc current gain i c [a], collector current 0.1 1 10 100 1000 10000 ic=-10ib tj=-25 o c tj=25 o c tj=125 o c vbe(sat)[mv], saturation voltage ic[a], collector current 0.1 1 10 10 100 1000 10000 ic=-10ib tj=-25 o c tj=25 o c tj=125 o c vce(sat)[mv], saturation voltage ic[a], collector current 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0 2 4 6 8 10 12 14 v ce = 5v i c [a], collector current v be [v], base-emitter voltage 1e-6 1e-5 1e-4 1e-3 0.01 0.1 1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 transient thermal resistance, r thjc [ o c / w] pulse duration [sec]
2sA1962/fja4213 ? pnp epitax ial silicon transistor ? 2008 fairchild semiconductor corporation www.fairchildsemi.com 2sA1962/fja4213 rev. a2 4 typical characteristics figure 7. power derating figure 8. safe operating area 0 25 50 75 100 125 150 175 0 20 40 60 80 100 120 140 160 p c [w], power dissipation t c [ o c], case temperature 110100 -0.01 -0.1 -1 -10 -100 *single nonrepetitive pulse t c =25[ o c] 10ms* 100ms* dc i c max. (pulsed*) i c max. (dc) i c [a], collector current v ce [v], collector-emitter voltage
2sA1962/fja4213 ? pnp epitax ial silicon transistor ? 2008 fairchild semiconductor corporation www.fairchildsemi.com 2sA1962/fja4213 rev. a2 5 package dimensions 15.60 0.20 4.80 0.2 0 13.60 0.20 9.60 0.20 2.00 0.20 3.00 0.20 1.00 0.20 1.40 0.2 0 3.20 0.10 3.80 0.20 13.90 0.20 3.50 0.20 16.50 0.30 12.76 0.20 19.90 0.20 23.40 0.20 18.70 0.20 1.50 +0.1 5 ?.0 5 0.60 +0.1 5 ?.0 5 5.45typ [5.45 0.30 ] 5.45typ [5.45 0.30 ] to-3p dimensions in millimeters
2sA1962/fja4213 pnp epitax ial silicon transistor 2sA1962/fja4213 ? 2008 fairchild semiconductor corporation www.fairchildsemi.com 2sA1962/fja4213 rev. a2 6 rev. i31 trademarks the following are registered and unregister ed trademarks and service marks fairchild se miconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make cha nges without further notice to any products herein to improve reliability, function, or design. fairchild does not assume any liability arising out of the application or use of any prod uct or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others . these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specif ically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as cr itical components in life support devices or systems without the express writ ten approval of fairchild semiconductor corporation. as used herein: 1. life support devices or sys tems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex ? build it now? coreplus? crossvolt ? ctl? current transfer logic? ecospark ? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? fps? frfet ? global power resource sm green fps? green fps? e-series? gto? i-lo ? intellimax? isoplanar? megabuck? microcoupler? microfet? micropak? millerdrive? motion-spm? optologic ? optoplanar ? ? pdp-spm? power220 ? power247 ? poweredge ? power-spm? powertrench ? programmable active droop? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? smart start? spm ? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? the power franchise ? tinyboost? tinybuck? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? serdes? uhc ? unifet? vcx? datasheet identification product status definition advance information formative or in design this datasheet contains the design s pecifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains pr eliminary data; supplementary data will be pub- lished at a later date. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. no identification needed full production this datasheet contains fi nal specifications. fairch ild semiconductor reserves the right to make changes at any time without notice to improve design. obsolete not in production this datasheet contains s pecifications on a produc t that has been discontin- ued by fairchild semiconductor. the data sheet is printed for reference infor- mation only.
|
